一、前言 光掩模的图形质量对LSI的电路性能和成品率影响很大。根据经典统计分布原理,可推得随机缺陷密度与IC成品率的关系是: Y=multiply from l=1 to(1/(1+D_lq_lA))(1) 式中:D_l——第l块掩模上的平均缺陷密度; A——IC单元电路芯片面积; l——光刻次数; q_l——缺陷的置命度。 根据式(1)可得到图1所示的曲线,这组曲线 I. INTRODUCTION Photomask graphics quality greatly affects LSI circuit performance and yield. According to the principle of classical statistical distribution, the relationship between random defect density and IC yield can be deduced as follows: Y = multiply from l = 1 to (1 / (1 + D_lq_lA)) (1) Where: D_l - Average defect density on the mold; A - chip area of ​​the IC unit circuit; l - the number of lithography; q_l - set the life of the defect. According to equation (1) can get the curve shown in Figure 1, this set of curves