磷化铟的能带结构具有三个能谷,和砷化镓相比,具有峰—谷电流比高,电子漂移速度大,谷间电子转移引起的负阻效应比砷化镓显著得多等优点,用作微波振荡和放大,预计比砷化镓优越。主要用于微波功率源和微波放大器,以代替目前的电子管,可使雷达全晶体 The energy band structure of indium phosphide has three energy valleys with a high peak-to-valley current ratio, a large electron drift rate and a significantly negative negative resistance effect due to electron transfer between valleys compared with gallium arsenide The advantages for microwave oscillation and amplification are expected to be superior to GaAs. Mainly used for microwave power source and microwave amplifier, to replace the current tube, the radar can be the whole crystal