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在对于现有金刚石气相生长工艺特点综合分析的基础上，通过对于热丝化学气相生长金刚石工艺过程状态参数的空间场模拟及相应的实验研究，揭示了热阻塞、热绕流等背离反应基本条件的现象，以及状态参数高度不均匀性的场分布，导致偏离金刚石生长所需合理条件。这些正是当前热丝化学气相生长金刚石速率低、成本高、质量不稳定的重要原因。空间模拟及生长实验结果证明，通过选择合理的反应器结构和反应条件，可以控制反应状态参数空间场，使其符合气相生长金刚石要求，达到在保证质量稳定南时，实现大面积高速生长。这些结果为大面积高速度高质量气相生长金刚石明确了新的发展前景和具体实现途径。
Based on the comprehensive analysis of the characteristics of diamond vapor growth process, the space field simulation and corresponding experimental study on the state parameters of hot filament chemical vapor growth diamond were carried out to reveal the basic conditions of thermal resistance, The phenomenon of field distribution of highly inhomogeneous state parameters leads to deviations from the reasonable conditions required for diamond growth. These are the important reasons for the low rate, high cost and unstable quality of current hot filament CVD diamond. The results of space simulation and growth experiment show that by selecting reasonable reactor structure and reaction conditions, the reaction state parameter space field can be controlled to meet the requirement of vapor growth diamond, and large area and high speed growth can be achieved when the quality is stable. These results clear the new development prospect and concrete realization way for the large-area, high-speed, high-quality GMC diamond.