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对CuxSiyO结构的阻变存储器(RRAM)进行了总剂量(TID)以及单粒子辐照(SEE)实验。总剂量实验中,1T1R样品分别接受总剂量为1,2和3 k Gy(Si O2)的60Coγ射线辐射。样品中没有出现低阻在辐照后翻转的现象。单粒子辐照实验中,16 kbit RRAM阵列样品分别接受线性能量转移(LET)值最高达75 Me V的4种离子束的辐射。样品中没有出现低阻在辐照后翻转的现象。除一组无翻转外,存储单元的高阻到低阻的翻转率皆在0.06%左右。实验结果证实了RRAM中已经形成的导电通道不会受辐照影响,因此不存在低阻翻转为高阻的现象。
Total dose (TID) and single-particle irradiation (SEE) experiments were performed on the CuxSiyO structure RRAM. In total dose experiments, 1T1R samples received 60Co gamma radiation at a total dose of 1, 2 and 3 k Gy (Si O2), respectively. There was no low resistance in the sample after the irradiation of flip phenomenon. In the single-particle irradiation experiments, 16 kbit RRAM array samples were irradiated with four ion beams with linear energy transfer (LET) values of up to 75 MeV, respectively. There was no low resistance in the sample after the irradiation of flip phenomenon. In addition to a set of no flip, the high resistance of the memory cell to the resistance of the flip rate of about 0.06%. The experimental results confirm that the conductive channels already formed in the RRAM are not affected by the irradiation and there is no phenomenon that the low resistance transforms to a high resistance.