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为了获得更高的光输出功率,采用倒装的结构.研究了p-GaN面生长金属高反镜前后GaN面的出光量.在p-GaN的表面上生长金属高反镜后,设计使用PECVD法在整个芯片上生长SiO_2/SiN_x多层介质膜高反镜,然后再腐蚀去除电极上的多层介质膜高反镜,使得倒装的GaN基LED台阶侧壁及p-GaN上没有覆盖金属高反镜的位置都保留有SiO_2/SiN_x多层介质膜高反镜.研究结果表明,生长两对SiO_2/SiN_x介质膜高反镜后,器件的光输出功率平均增加了10.2%.这说明SiO_2/SiN_x多层介质膜形成的高反镜有效的提高了倒装GaN基LED的光输出功率,把从LED台阶侧壁以及p-GaN上没有覆盖金属高反镜的位置出射光子反射回LED内部,经过一次或者多次反射后,从其他的出光面出射.
In order to obtain higher optical output power, flip-chip structure was used to study the light output of the GaN surface before and after the growth of the p-GaN surface metal high reflex mirror.After the metal high reflectivity mirror was grown on the surface of p-GaN, PECVD Method to grow SiO_2 / SiN_x multi-layer dielectric film high reflection mirror on the entire chip, and then corrode and remove the multi-layer dielectric film high reflection mirror on the electrode so that the flip-chip GaN-based LED step sidewall and p-GaN are not covered with metal The results show that the optical output power of the device increases by 10.2% on average after the growth of two pairs of SiO_2 / SiN_x dielectric high-reflection mirrors, which shows that SiO_2 / SiN_x multilayer dielectric film formed by the high reflection mirror effectively improve the flip-GaN-based LED light output power from the LED step sidewalls and p-GaN does not cover the metal mirror high-position exit photons reflected back to the LED interior , After one or more reflections, the light emerges from the other.