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用于卫星刷式扫描多光谱成象的1～3.5μm短波长红外硅化钯(Pd_2Si)肖特基势垒传感器(SWIR)正在研制中。该传感器采用肖特基势垒红外电荷耦合器件(IRCCD)技术来实现双带集成电路。集成电路的两列线阵各含512元探测器。象元中心到中心的间隔为30μm,填充因数为80～90％,从而为拼接成大型多片焦平面阵列提供了可能性。迄今,单片32×64和64×128元硅化钯隔行转移的IRCCD器件业已研制成功。这些器件呈现出低的响应不均匀性,其量子效率的改善取决于硅化钯探测器的不同结构参数的最佳化。硅化钯探测器在120～125K条件下测得的暗电流为2nA/cm~2。这一工作温度被2×512器件刷扫工作时每一探测器18μW的低功耗所补偿。上述技术参数将允许具有上千元探测器件的星载被动致冷双带焦平面阵列的实现,并证明双带器件的噪声等效△反射率(NE△ρ)满足地球资源特性的精确分类的要求。
A 1 to 3.5 μm short wavelength infrared palladium palladium silicide (Pd_2Si) Schottky barrier sensor (SWIR) for satellite brush-scanning multispectral imaging is under development. The sensor uses a Schottky barrier infrared charge coupled device (IRCCD) technology to achieve dual-band integrated circuits. Two arrays of integrated circuits each containing 512 yuan detector. The pixel center-to-center spacing is 30 μm and the fill factor is 80-90%, providing the possibility of splicing into a large, multi-chip focal plane array. To date, single-chip 32 × 64 and 64 × 128 palladium silicide interlaced IRCCD devices have been successfully developed. These devices exhibit low response inhomogeneities and their quantum efficiency improvement depends on the optimization of different structural parameters of the palladium-silicide detector. The dark current measured by the palladium silicide detector at 120 ~ 125K is 2nA / cm ~ 2. This operating temperature is compensated for by the low power consumption of 18μW per probe at 2 × 512 devices. The above technical parameters will allow the realization of a space-based passive cooled double-band focal plane array with a thousand-element detection device and demonstrate that the noise equivalent delta reflectance (NE △ ρ) of the dual-band device satisfies the accurate classification of the Earth’s resource characteristics Claim.