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本文定义一个电流灵敏度函数S(t)来描述单管单元RAM读出放大器的灵敏度,它比较形象地描绘了读出放大器到达自锁这一瞬态过程。利用计算机模拟计算,可以改变各种设计因素(器件参数、位线预充电电平,φ_S上升波形……等)来观察它们对于S(t)函数曲线特征的影响,并以此作为最佳化设计的依据,直观地获得设计参数。本文还对读出放大器的设计提出了若干改进建议。
This paper defines a current sensitivity function S (t) to describe the sensitivity of the single-pipe RAM sense amplifier. It vividly depicts the transient state of the sense amplifier reaching self-latching. Using computer simulations, various design factors (device parameters, bit line precharge levels, φ_S rising waveforms, etc.) can be varied to observe their effect on the curve characteristics of the S (t) function and use this as an optimization The basis of design, intuitive access to design parameters. This article also puts forward some suggestions for improving the design of the sense amplifier.