半导体激光器由于其体积小、重量轻、结构紧凑且峰值功率高而受关注,由于其结构紧凑而使焊在载片上的器件在界面产生热流峰值达1kw/cm2量级,电-光转换效率达50%～60%,这个热负载限制了器件室温工作的要求,是高功率器件运转的主要限制因素。为便于高平均功率下这些器件的运行,各 Due to its small size, light weight, compact structure and high peak power, semiconductor lasers are attracting attention due to their compact structure. The device soldered on the chip generates a peak heat flux of 1 kw / cm2 at the interface and the electro-optical conversion efficiency reaches 50% to 60%. This thermal load limits the requirements for operating the device at room temperature and is a major limiting factor in the operation of high power devices. In order to facilitate the operation of these devices under high average power, each