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我们用高灵敏的肖特基结注入电流检测磁共振方法对蓝宝石上外延硅膜进行了研究。实验观察到一各向同性非对称的磁共振谱,经拟合它由线宽10~(-3)T,g值分别为2.0055及2.012的二线组合而成,二线强度比3.7:1。前者是硅悬挂键,后者为非晶硅价态尾态共振。实验证实该磁共振信号来自于Si/Al_2O_3界面。
We investigated the epitaxial silicon film on sapphire using a highly sensitive Schottky-junction current-sensing MR method. An isotropic, asymmetric magnetic resonance spectroscopy was observed experimentally and was fitted by a combination of two lines with a linewidth of 10 -3 T, g values of 2.0055 and 2.012, respectively, and a second line intensity ratio of 3.7: 1. The former is a silicon dangling bond, the latter is amorphous silicon tail state resonance. Experiments confirmed that the magnetic resonance signal from the Si / Al_2O_3 interface.