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设计制备了一种由双层半绝缘GaAs:EL2晶体组成的新型超快光电导功率开关.由于触发状态下双层GaAs晶体之间满足动态分压关系,使该开关在强电场偏置下触发时,双层GaAs晶体既能先后发生高增益过程,又能相互抑制对方进入锁定状态,开关输出为近似方波的双峰脉冲.因此,这种开关的工作方式既具有非线性模式特有的所需触发光能小、上升速度快等优点,又具有线性模式特有的重复工作频率高、使用寿命长等优点.偏压6500 V时用脉宽8 ns、能量3 mJ的1064 nm激光触发,输出电脉冲的上升沿为13.2 ns,下降沿为54.6 ns,脉宽为148.4 ns,第一个波峰高885 V,第二个波峰高897 V.随着外加偏置电压的提高,上升时间基本不变,脉宽和下降时间均略有减小,双峰峰值均明显增大.
A novel ultrafast photoconductive power switch made of double-layer semi-insulating GaAs: EL2 crystal is designed and fabricated.With the dynamic voltage divider between the two GaAs crystals in the triggered state, the switch is triggered under strong electric field bias , The double-layer GaAs crystal can not only enter into the high-gain process one after another, but also inhibit each other to enter the locked state, and the switch output is an approximately square-wave bimodal pulse, therefore, the working mode of the switch has the characteristics of a non-linear mode Need to trigger the small light, fast rise, etc., but also has a linear mode-specific repetition of high frequency, long life, etc. Bias voltage 6500 V with pulse width 8 ns, energy 3 mJ 1064 nm laser trigger output The rising edge of the electrical pulse is 13.2 ns, the falling edge is 54.6 ns, the pulse width is 148.4 ns, the first peak is 885 V high and the second peak is 897 V. With the increase of the applied bias voltage, the rise time is basically not Change, pulse width and fall time are slightly reduced, both peaks were significantly increased.