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Pt Si肖特基二极管的势垒高度制约 Pt Si红外探测器的截止波长和量子效率 .在 Pt Si/Si界面注入 In+ 、B+ ,采用高浓度、浅层注入避免隧穿效应 ,用 Ar气保护热处理消除注入损伤 ,附加掩膜层控制离子注入深度 ,成功地将 Pt Si肖特基二极管的势垒高度降低到 0 .1 5e V.
The barrier height of the Pt Si Schottky diode restricts the cut-off wavelength and quantum efficiency of the Pt Si infrared detector. In +, B + are implanted into the Pt Si / Si interface, the tunneling effect is avoided by using high concentration and shallow injection, The heat treatment removes the implantation damage and the additional masking layer controls the ion implantation depth, successfully reducing the barrier height of the Pt Si Schottky diode to 0.115eV.