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一、前言 GaP是间接能隙的半导体材料,发光效率低。在GaP中掺氮可以提高发光效率,但掺氮量过高会导致外延层表面高低不平和增加光吸收,而降低发光效率。国外报导的最佳掺氮量不一,一般为8×10~(17)～4×10~(18)/厘米~3。多数是采用通氨掺氮的方法。 本文也是以氨做为氮的掺杂源。先用干冰收集成液体氨然后用氢气携带液体氨,实现氮的掺杂。在其它外延条件相同的情况下,只改变氢气中的氨分压,进行液相外延生长,发现所生长的GaP外延片的氮峰强度,外延片表面平整度,外延片所制发光管的总光通量,功率效率和氨分压有关。
I. Introduction GaP is an indirect energy gap of semiconductor materials, low luminous efficiency. Nitrogen in GaP can improve the luminous efficiency, but high nitrogen content can cause the surface of the epitaxial layer is uneven and increase the light absorption, and reduce the luminous efficiency. Foreign best reported nitrogen content varies, generally 8 × 10 ~ (17) ~ 4 × 10 ~ (18) / cm ~ 3. Most are using ammonia nitrogen method. This article also uses ammonia as a nitrogen source. The first use of dry ice to collect liquid ammonia and then carry liquid ammonia with hydrogen to achieve nitrogen doping. In the case of other epitaxial conditions, only changing the partial pressure of ammonia in hydrogen, liquid-phase epitaxial growth and found that the GaP epitaxial growth of nitrogen peak intensity, epitaxial wafer surface roughness, the epitaxial wafer made of the total luminous tube Luminous flux, power efficiency and ammonia partial pressure.