研究了Si N钝化前利用感应耦合等离子体(ICP)对Al GaN/GaN HEMT表面进行NF3等离子体处理对器件性能的影响.结果表明,运用低能量的NF3等离子体处理钝化前的Al GaN/GaN HEMT表面能有效抑制器件电流崩塌,而器件直流及微波小信号特性则未受影响.微波功率测试表明,经过6min NF3等离子体处理的Al GaN/GaN HEMT在2GHz,30V工作电压下达到6.15W/mm的输出功率密度,而未经过处理的器件只达到1.82W/mm的输出功率密度. The effect of NF3 plasma treatment on the surface of Al GaN / GaN HEMTs before Si N passivation was investigated. The results show that the low energy NF3 plasma treatment of AlGaN before passivation / GaN HEMT surface can effectively suppress the device current collapse, while the device DC and microwave small signal characteristics are not affected.Microwave power test showed that after 6min NF3 plasma treatment of Al GaN / GaN HEMT at 2GHz, 30V operating voltage to 6.15 W / mm output power density, while the untreated device only reached 1.82W / mm output power density.