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高频 C-V 法和脉冲 C-V 法在测试 GaAsFET 外延层的 N(x)曲线时结果是有差异的,本文对这些差异作了分析和解释。GaAs FET 外延片的理论浓度分布如图1所示。图中虚线代表一般情况下测得的
High-frequency C-V method and pulse C-V method in the test of GaAsFET epitaxial layer N (x) curve results are different, these differences were analyzed and explained. GaAs FET epitaxial wafers theoretical concentration distribution shown in Figure 1. The dotted line in the figure represents the average measured