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在大规模集成电路的研制与生产中,其负载电阻阻值的准确性,关系到电路功能正确与否。本文研究了多晶硅电阻值的控制问题。用多晶硅制作电阻,一般会遇到以下几个问题: (1)掺杂对多晶硅电阻值影响极大,特别是在高阻范围。例如,掺杂浓度大于5×10~(17)cm~(-2)时,电阻率的变化可达5个数量级。(2)多晶硅的颗粒度(受高温工艺影响很大)会导致电阻率的变化。
In the development and production of large-scale integrated circuits, the resistance of the load resistance of the accuracy of the circuit functions related to whether or not. This paper studies the control of polysilicon resistance. Polysilicon resistance, generally encounter the following questions: (1) doping on the polysilicon resistance is greatly affected, especially in the high resistance range. For example, when the doping concentration is more than 5 × 10 ~ (17) cm ~ (-2), the resistivity changes up to 5 orders of magnitude. (2) Polysilicon particle size (greatly affected by high temperature process) will lead to changes in resistivity.