基于虚拟仪器技术的SRAM单粒子效应测试系统研制完成后(图1),已使用模拟的方法,如向SRAM存储器中写入错误数据来模拟单粒子翻转效应(SEU),或者将单粒子锁定(SEL)阈值设置在正常工作电流以下使其产生SEL,验证了系统能及时响应并能可靠运行。但是,系统在真实的单粒子效应实验中,能否可靠运行、实现所有的功能,还需要在实验中进一步验证和测试。测试系统的实验验证是该系统能否应用于SRAM单粒子效应试验研究的唯一途径。只有经过实验验证 After the development of the SRAM single event effect test system based on virtual instrument technology (Figure 1), simulation methods such as writing error data to the SRAM memory to simulate single event flip-flop (SEU) or single event locking SEL) setting the SEL below the normal operating current results in SEL, verifying that the system responds promptly and operates reliably. However, the system in the real experiment of single-particle effects, reliable operation, to achieve all the features, but also in the experiment to further verify and test. The experimental verification of the test system is the only way that the system can be applied to the experimental study of SRAM single-particle effect. Only through experimental verification