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A p-type quantum well infrared photodetector (QWIP) integrated with a light-emitting diode (LED) (named QWIP-LED) was fabricated and studied. The infrared photo-response spectrum was obtained from the device resistance variation and the near-infrared photo-emission intensity variation. A good agreement between these two spectra was observed, which demonstrates that the long-wavelength infrared radiation around 7.5 μm has been transferred to the near-infrared light at 0.8 μm by the photo-electronic process in the QWIP-LED structure. Moreover, the experimentally observed infrared response wavelength is in good agreement with the theoretical calculation value of 7.7 μm. The results on the upconversion of the infrared radiation will be very useful for the new infrared focal plane array technology.
A p-type quantum well infrared photodetector (QWIP) integrated with a light-emitting diode (LED) (named QWIP-LED) was fabricated and studied. The infrared photo-response spectrum was obtained from the device resistance variation and the near-infrared A good agreement between these two spectra was observed, which demonstrates that the long-wavelength infrared radiation around 7.5 μm has been transferred to the near-infrared light at 0.8 μm by the photo-electronic process in the QWIP- LED structure. Moreover, the experimentally observed infrared response wavelength is in good agreement with the theoretical calculation value of 7.7 μm. The results on the upconversion of the infrared radiation will be very useful for the new infrared focal plane array technology.