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Bi0.5(Na0.85K0.15)0.5TiO3(BNKT15) thin films were synthesized by metal-organic decomposition(MOD) at annealing temperatures of 650,680,710 and 740℃,and the effects of annealing temperature on the microstructure,dielectric properties,remnant polarization(2Pr) and leakage current density were studied with X-ray diffractometer,atomic force microscope,precision impedance analyzer,ferroelectric analysis station and semiconductor parameter tester.The results show that the thin film annealed at 710℃ exhibits a typical perovskite structure without predominant orientation and a smooth surface with evenly distributed grains.2Pr value(67.4 μC/cm2 under 830 kV/cm) and the leakage current density(1.6×10-6 A/cm2 at 170 kV/cm) for BNKT15 thin film annealed at 710℃ are better than those for thin films annealed at other temperatures.
Bi0.5 (Na0.85K0.15) 0.5TiO3 (BNKT15) thin films were synthesized by metal-organic decomposition (MOD) at annealing temperatures of 650,680,710 and 740 ° C, and the effects of annealing temperature on the microstructure, dielectric properties, remnant polarization (2Pr) and leakage current density were studied with X-ray diffractometer, atomic force microscope, precision impedance analyzer, ferroelectric analysis station and semiconductor parameter tester. Results show that the thin film annealed at 710 ℃ exhibits a typical perovskite structure without predominant orientation and a smooth surface with an evenly distributed grains.2Pr value (67.4 μC / cm2 under 830 kV / cm) and the leakage current density (1.6 × 10-6 A / cm2 at 170 kV / cm) for BNKT15 thin film annealed at 710 ℃ are better than those for thin films annealed at other temperatures.