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An integrable silicon-on-insulator(SOI) power lateral MOSFET with a trench gate and a recessed drain (TGRD MOSFET) is proposed to reduce the on-resistance.Both of the trench gate extended to the buried oxide (BOX) and the recessed drain reduce the specific on-resistance(R_(on,sp)) by widening the vertical conduction area and shortening the extra current path.The trench gate is extended as a field plate improves the electric field distribution. Breakdown voltage(BV) of 97 V and R_(on,sp) of 0.985 mΩ·cm~2(V_(GS) = 5 V) are obtained for a TGRD MOSFET with 6.5μm half-cell pitch.Compared with the trench gate SOI MOSFET(TG MOSFET) and the conventional MOSFET,R_(on,sp) of the TGRD MOSFET decreases by 46%and 83%at the same BV,respectively.Compared with the SOI MOSFET with a trench gate and a trench drain(TGTD MOSFET),BV of the TGRD MOSFET increases by 37%at the same R_(on,sp).
An integrable silicon-on-insulator (SOI) power lateral MOSFET with a trench gate and a recessed drain (TGRD MOSFET) is proposed to reduce the on-resistance. Both of the trench gate extended to the buried oxide (BOX) and recessed drain reduce the specific on-resistance (R_ (on, sp)) by widening the vertical conduction area and shortening the extra current path. Trench gate is extended as a field plate improves the electric field distribution. Breakdown voltage (BV) of 97 V and R_ (on, sp) of 0.985 mΩ · cm ~ 2 (V_ (GS) = 5 V) were obtained for a TGRD MOSFET with 6.5μm half-cell pitch. Compared with the trench gate SOI MOSFET the conventional MOSFET, R_ (on, sp) of the TGRD MOSFET decreases by 46% and 83% at the same BV, respectively. Compared with the SOI MOSFET with a Trench Gate and a Trench drain (TGTD MOSFET), BV of the TGRD MOSFETs increase by 37% at the same R_ (on, sp).