论文部分内容阅读
使用低束流技术 ,在高分辨率扫描质子微探针装置上开展了离子束感生电荷显微术 ,并研究了半导体材料 Ga As的电子学性能。实验结果表明 ,在同一扫描区域内 ,材料的电荷收集效率具有不均匀特性 ,而且氦离子激发产生的 IBIC显微图谱的对比度比质子要强。
Ion beam induced charge microscopy was performed on high resolution proton microprobe devices using low beam current technology and the electronic properties of the GaAs semiconductor material were investigated. The experimental results show that the charge collection efficiency of the material is inhomogeneous in the same scanning region, and the contrast of the IBIC spectra produced by helium ion excitation is stronger than that of the proton.