论文部分内容阅读
00560 An 80 W AlGaN/GaN Heterojunction FET with a Field-Modulating Plate/Y. Okamoto, Y. Ando,H. Miyamoto et al(NEC Corporation, Japan)//2003 IEEE MTT-s Digest.—225 在SiC衬底上制作了一种有电场调制电极(FP)的AlGaN/GaN异质结FET。通过加上一个FP电极,器件的栅击穿电压(BV_(gd))从50 V提高到160 V。FP电极长度为1.0 μm的器件的BV_(gd)最大。4 mm宽晶胞FET在41 V漏偏压下,其输出功率为32.5 W(8.1 W/
00560 An 80 W AlGaN / GaN Heterojunction FET with a Field-Modulating Plate / Y. Okamoto, Y. Ando, H. Miyamoto et al (NEC Corporation, Japan) // 2003 IEEE MTT-s Digest. An AlGaN / GaN heterojunction FET with an electric field modulation electrode (FP) was fabricated. By adding a single FP electrode, the device’s gate breakdown voltage (BV_ (gd)) is increased from 50 V to 160 V. Devices with FP electrode length of 1.0 μm have the highest BV_ (gd). The 4-mm wide cell FET, with a 41-V drain bias, has an output power of 32.5 W (8.1 W /