一、材料特性、应用及要求从半导体工艺发展的初期开始,GaAs就已成为一种引人注目的材料了。它与Ge、Si等元素半导体材料相比具有许多优异的性能,如: (1)电子迁移率高。300K的电子迁移率约为8500cm~2/V·s(Ge:3900cm~2/V·s,Si:1500cm~2/V·s),故适合于制作高速高频器件。 (2)禁带宽度大。E_g=1.43eV(Ge:0.8eV,Si:1.12eV),故适于制作高温,大功率器件。 First, the material properties, applications and requirements From the beginning of the semiconductor process development, GaAs has become a compelling material. It has many excellent properties compared with elemental semiconductor materials such as Ge and Si, such as: (1) high electron mobility. 300K has an electron mobility of about 8500cm 2 / V · s (Ge: 3900cm 2 / V · s, Si 1500cm 2 / V · s), so it is suitable for high speed and high frequency devices. (2) forbidden band width. E_g = 1.43eV (Ge: 0.8eV, Si: 1.12eV), it is suitable for making high-temperature, high-power devices.