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大规模集成电路生产工艺要求降低碱金属、碱土金属及重金属的沾污,以提高器件的稳定性、可靠性及成品率;特别像Al、Ca、Fe、Mg、Na、Zn等,极易沾污。前人曾采用无火焰原子吸收法测定高纯水中超痕量的杂质元素,而测定高纯硅烷中超痕量杂质元素的工作尚未见到。我们结合生产任务分析了大规模集成电路生产工艺中使用的高纯水及生长硅栅等工艺中使用的高纯硅烷中超痕量杂质的含量。
Large-scale integrated circuit production process requirements to reduce the alkali, alkaline earth metal and heavy metal contamination, in order to improve device stability, reliability and yield; especially like Al, Ca, Fe, Mg, Na, Zn, Sewage. Previously, flame atomic absorption spectrometry (FAAS) has been used to determine the ultra trace impurities in high purity water. However, the determination of ultra trace impurities in high purity silanes has not been observed. We combine production tasks to analyze the content of ultra-trace impurities in high-purity silanes used in high-purity water and growth silicon gate used in large scale integrated circuit manufacturing processes.