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研究了Al_2O_3掺杂对Y_2O_3稳定的ZrO_2材料电导性能的影响。因为Al与自由氧离子空穴缔合的能力大于Y,所以YSZ的晶粒电导随Al_2O_3含量的增大而减小。Al_2O_3一方面能清除晶界上的SiO_2,同时又与晶界中的氧离子空穴缔合,在这两方面影响下,随Al_2O_3含量的增大,晶界电阻先减小后增大。
The effect of Al_2O_3 doping on the electrical conductivity of Y_2O_3 stabilized ZrO_2 materials was investigated. Because of the ability of Al to associate with free oxygen ion holes more than Y, the grain conductivity of YSZ decreases with the increase of Al 2 O 3 content. On the one hand, Al 2 O 3 can remove SiO 2 on the grain boundary and associate with oxygen ion hole in the grain boundary. Under the influence of these two factors, the grain boundary resistance firstly decreases and then increases with the increase of Al 2 O 3 content.