论文部分内容阅读
本文着重从晶体成核理论的基本公式和机理分析讨论了用汽相外延方法在多晶硅层上生长单晶的可能性及影响生长的因素,并用理论分析结果对实验现象作了解释。
This paper focuses on the basic formulas and mechanism of crystal nucleation theory, discusses the possibility of growth of single crystal on polycrystalline silicon layer by vapor phase epitaxy and the factors that affect the growth, and explains the experimental phenomenon by theoretical analysis.