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本文研究氧等离子体辅助原子层沉积氧化铝中各个沉积参数对薄膜性能和结构的影响。在氧等离子体辅助原子层沉积氧化铝的过程中,通过改变基底温度、等离子体放电时间、等离子体放电功率、单体三甲基铝冲洗时间和反应气体氧气冲洗时间,研究了工艺参数对于氧化铝的生长的影响。通过发射光谱仪(OES)对等离子体进行检测,原子力显微镜(AFM)和椭偏(SE)对薄膜表面形貌、厚度和折射率进行测量及SEM对薄膜断面进行检测。结果显示,在室温下氧等离子体辅助氧化铝沉积需要较长的单体三甲基铝的冲洗时间才能得到粗糙度小的薄膜,薄膜沉积速率随温度的升高而减小(低的沉积温度),薄膜的折射率则变大。而等离子体在40W到80W的低放电功率下,放电功率对氧化铝的沉积速率影响不大。
In this paper, the effects of various deposition parameters on the properties and structure of the films by oxygen plasma assisted atomic layer deposition of alumina were studied. In the process of oxygen plasma-assisted atomic layer deposition of alumina, the effects of process parameters on the oxidation rate, oxidation rate and oxidation rate were studied by changing the substrate temperature, the plasma discharge time, the plasma discharge power, the monomer trimethylaluminum flushing time and the reaction gas oxygen flushing time. The impact of aluminum growth. The plasma was detected by an emission spectrometer (OES), the surface morphology, thickness and refractive index of the film were measured by atomic force microscopy (AFM) and ellipsometry (SE), and the cross section of the film was measured by SEM. The results show that oxygen plasma-assisted deposition of aluminum at room temperature requires a longer wash time of monomeric trimethylaluminum to obtain a less coarse film with a decrease in film deposition rate with increasing temperature (low deposition temperature ), The refractive index of the film becomes larger. The plasma discharge power at 40W to 80W low discharge power of alumina deposition rate has little effect.