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用GaAs/Al_(0.32)Ga_(0.68)As,In_(0.15)Ga_(0.85)As/Al_(0.15)Ga_(0.85)As和Ga_(0.47)In_(0.53)As/Al_(0.48)In_(0.52)As三种不同材料系统制作了栅长几乎都为0.35μm的HEMT,我们报道了对这三种HEMT性能所做的理论研究结果。采用综合Morite Carlo模型进行计算,该模型包括实空间转移的整个过程:二维电子气输运特性、不稳定输运及由Poisson方程独立解得到的二维电场分布。根据Ⅰ-Ⅴ特性、跨导和截止频率的测试结果,比较了每种器件的性能。采用这种方法可以完全区别材料参数对器件性能的影响,并将它们分别弄清楚。结果表明,采用InGaAs材料制作的器件的工作性能比传统的GaAs/AlGaAs器件好
(0.32) As_ (0.15) Ga_ (0.85) As_Al_ (0.15) Ga_ (0.85) As and Ga_ (0.47) In_ (0.53) As / Al_ (0.48) In_ ) As Three HEMTs with gate lengths of almost 0.35μm were fabricated on three different material systems. We report the theoretical results of these three HEMT properties. A comprehensive Morite Carlo model is used to calculate the whole process of real space transfer, including two-dimensional electron gas transport characteristics, unstable transport and two-dimensional electric field distribution independently obtained by Poisson’s equation. According to the Ⅰ-Ⅴ characteristics, transconductance and cut-off frequency of the test results, compared the performance of each device. This method can be completely different material parameters on the performance of the device, and they are clear. The results show that the performance of the device made of InGaAs material is better than that of the conventional GaAs / AlGaAs device