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本文报道了氯化物汽相外延生长Ga_(0.47)In_(0.53)As-InP异质结输运性质研究结果.4.2K下shubnikov-de Haas测量,Van de Pauw Hall测量和迴旋共振测量表明这种异质结界面存在高电子迁移率二维电子气.二维电子气浓度为1.7×10~(11)cm~(-2),电子迁移率为3.3×10~4cm~2/V·s.并观察到迴旋共振,给出电子有效质量为m_■~*=0.046m_o.
In this paper, we report the transport properties of Ga_ (0.47) In_ (0.53) As-InP heterojunction grown by vapor phase epitaxial growth of chlorides.The measurement of shubnikov-de Haas at4.2K, the measurement of Van de Pauw Hall and the measurement of cyclotron resonance The two - dimensional electron gas with high electron mobility exists at the interface of heterojunction, the electron density is 1.7 × 10 ~ (11) cm ~ (-2) and the electron mobility is 3.3 × 10 ~ 4cm ~ 2 / V · s. And observed cyclotron resonance, given the effective electron mass m_ ■ ~ * = 0.046m_o.