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通过磁控溅射技术在玻璃基板上制备氧化铟镓锌(IGZO)薄膜,为了研究不同氧分压对IGZO薄膜结构及光电特性的影响,在不同的氧分压0,0.015,0.06和0.24 Pa下制备了不同样品。样品的沉积速率、成分结构、面电阻及光电性质分别用椭偏仪、X射线光电子能谱(XPS)和四点探针等方法进行了测量。实验结果表明,随着氧分压的增大,IGZO薄膜的沉积速率呈下降趋势,不同氧分压的IGZO薄膜的元素比例(In∶Ga∶Zn)差异不大,在可见光的范围内其氧分压为0 Pa以上时,IGZO薄膜平均透过率均超过80%,阻值随氧分压的增加而增大。制作了不同氧分压以IGZO为沟道层的薄膜晶体管,其迁移率为5.93~9.42 cm2·V-1·s-1,阈值电压为3.8~9.2 V。
In order to study the effect of different partial pressure of oxygen on the structure and photoelectric properties of IGZO thin films, magnetron sputtering was used to prepare IGZO thin films on glass substrates with different oxygen partial pressures of 0,0.015,0.06 and 0.24 Pa Different samples were prepared. The deposition rate, composition, surface resistance and photoelectric properties of the samples were measured by ellipsometry, X-ray photoelectron spectroscopy (XPS) and four-point probe respectively. The experimental results show that with the increase of oxygen partial pressure, the deposition rate of IGZO thin film decreases. The element ratio of In: Ga: Zn is not different between different oxygen partial pressure IGZO films. In the visible range, When the partial pressure is above 0 Pa, the average transmittance of IGZO thin films is more than 80%, the resistance increases with the increase of oxygen partial pressure. The thin film transistors with different oxygen partial pressure with IGZO as the channel layer were fabricated. The mobility was 5.93-9.42 cm2 · V-1 · s-1, and the threshold voltage was 3.8-9.2 V.