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Boron-doped NiO thin flms were prepared on glass substrates at 400 C by airbrush spraying method using a solution of nickel nitrate hexahydrate.Their physical properties were investigated as a function of dopant concentration.From X-ray difraction patterns,it is observed that the flms have cubic structure with lattice parameters varying with boron concentration.The morphologies of the flms were examined by using scanning electron microscopy,and the grain sizes were measured to be around 30-50 nm.Optical measurements show that the band gap energies of the flms frst decrease then increase with increasing boron concentration.The resistivities of the flms were determined by four point probe method,and the changes in resistivity with boron concentration were investigated.
Boron-doped NiO thin flms were prepared on glass substrates at 400 C by airbrush spraying method using a solution of nickel nitrate hexahydrate .irir physical properties were investigated as a function of dopant concentration. From X-ray difraction patterns, it is observed that the flms have cubic structure with lattice parameters varying with boron concentration. The morphologies of the flms were examined by using scanning electron microscopy, and the grain sizes were measured to be around 30-50 nm. Optical measurements show that the band gap energies of the flms frst decrease then increase with increasing boron concentration. The resistivities of the flms were determined by four point probe method, and the changes in resistivity with boron concentration were investigated.