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介绍溶胶-凝胶(Sol-Gel)法制备Bi4Ti3O12薄膜的工艺过程;对前驱体溶液进行了综合热分析,并对薄膜的性质进行了研究;成功地在p-Si衬底上制备出随机取向的Bi4Ti3O12铁电薄膜。在650°C下退火30min得到的Bi4Ti3O12薄膜的剩余极化强度Pr=12μC/cm2,矫顽场强Ec=130kV/cm。
The process of preparing Bi4Ti3O12 thin film by Sol-Gel method is introduced. The comprehensive thermal analysis of the precursor solution is carried out and the properties of the thin film are studied. The random orientation is successfully prepared on the p-Si substrate Bi4Ti3O12 ferroelectric thin film. The remanent polarization Pr = 12μC / cm2 and the coercive field strength Ec = 130kV / cm of the Bi4Ti3O12 thin films annealed at 650 ° C for 30min.