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利用金属有机物化学气相沉积系统在蓝宝石衬底上通过有源层的变温生长,得到In组分渐变的量子阱结构,从而获得具有三角形能带结构的InGaN/GaN多量子阱发光二极管(LED)(简称三角形量子阱结构LED).变温光致发光谱结果表明,相对于传统具有方形能带结构的量子阱LED(简称方形量子阱结构LED),三角形量子阱结构有效提高了量子阱中电子和空穴波函数的空间交叠,从而增加了LED的内量子效率;电致发光谱结果表明,三角形量子阱结构LED器件与传统结构LED器件相比,明显改善了发光峰值波长随着电流的蓝移现象.通过以上的结果比较,三角形量子阱结构LED比传统结构LED具有更高的发光效率.
The InGaN / GaN multiple quantum well light-emitting diode (LED) with a triangular energy band structure is obtained by using a metal-organic chemical vapor deposition system to grow a quantum well structure with a gradient of the In composition on a sapphire substrate by the temperature- Referred to as triangular quantum well structure LED.) Temperature-dependent photoluminescence spectroscopy results show that, compared with the traditional square energy band structure of the quantum well LED (referred to as square quantum well structure LED), the triangular quantum well structure effectively improve the quantum well electron and void And the cavity function overlapped to increase the internal quantum efficiency of the LED. The results of electroluminescence showed that compared with the conventional LED devices, the LED quantum well structure significantly improved the emission peak wavelength with the blue shift of the current Phenomenon.Through the above results, the triangular quantum well structure of LED than traditional LED has higher luminous efficiency.