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用气态源分子束外延（ＧＳＭＢＥ）法生长了掺杂ＧｅｘＳｉ１－ｘ／Ｓｉ合金并试制了ｐ－ｎ异质结二极管，Ｘ射线双晶衍射和二极管Ｉ－Ｖ特性表明，ＧｅｘＳｉ１－ｘ／Ｓｉ合金的完整性与异质结界面的失配位错是影响异质结二极管反向漏电的主要原因．通过控制ＧｅｘＳｉ１－ｘ／Ｓｉ合金的组分及厚度，我们获得了较高质量的ＧｅｘＳｉ１－ｘ／Ｓｉｐ－ｎ异质结二极管材料，其反向电压为－５Ｖ时，反向漏电流密度为６．１μＡ／ｃｍ２．
Growth of doped GexSi1-x / Si alloys by gas state source molecular beam epitaxy (GSMBE) and fabrication of p-n heterojunction diodes with X-ray double crystal diffraction and diode I-V characteristics show that the GexSi1-x / The mismatch dislocation at the interface of heterojunction is the main reason that influences the reverse leakage of heterojunction diode. By controlling the composition and thickness of the GexSi1-x / Si alloy, we obtained higher quality GexSi1-x / Sip-n heterojunction diode materials with a reverse leakage current density of -6 at a reverse voltage of -5V .1 μA / cm2.