论文部分内容阅读
实现高速沉积对于薄膜微晶硅太阳电池产业化降低成本是一个重要手段.采用超高频等离子体增强化学气相沉积(VHF-PECVD)技术,实现了微晶硅硅薄膜的高速沉积,并通过改变气体总流量改变气体滞留时间,考察了气体滞留时间在化学气相沉积(CVD)过程中对薄膜的生长速率以及光电特性和结构特性的影响.采用沉积速率达到12/s的高速微晶硅工艺制备微晶硅电池,电池效率达到了5.3%.
The realization of high-speed deposition is an important method for the industrialization of thin-film microcrystalline silicon solar cells and the high-speed deposition of microcrystalline silicon-silicon thin films is realized by using the technique of VHF-PECVD. The effect of gas residence time on the growth rate, optical and electrical properties and structural properties of the films during chemical vapor deposition (CVD) was investigated by changing the gas holdup time. The high speed microcrystalline silicon with a deposition rate of 12 / s Microcrystalline silicon battery, the battery efficiency reached 5.3%.