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利用电子束反应沉积技术制备了高迁移率In2O3基W-Mo共掺(IMWO,In2O3:WO3/MoO3)薄膜,研究了不同等量WO3-MoO3掺杂浓度对薄膜的微观结构、光学性能和电学性能的影响。IMWO薄膜的表面形貌呈现“类金字塔”型。随着WO3-MoO3共掺量的增加,IMWO薄膜的电阻率依次下降,载流子浓度逐渐增加,在共掺量为1.0%时制得相对较高电子迁移率的薄膜,电子迁移率约为45.5 cm2.V-1.s-1,电阻率约为3.66×10-4Ω.cm,电子的载流子浓度约为3.74×1020cm-3,方块电阻约为22.88Ω/□,400~1 100 nm光谱区域内的平均透过率约为76%(含玻璃衬底,即glass/IMWO薄膜)。
The high mobility In2O3-based W-Mo co-doped (IMWO, In2O3: WO3 / MoO3) thin films were prepared by electron beam deposition. The effects of different concentrations of WO3-MoO3 on the microstructure, optical properties and electrical The impact of performance. The surface morphology of IMWO film shows “pyramid” type. With the increase of WO3-MoO3 co-content, the resistivity of IMWO films decreases in turn and the carrier concentration gradually increases. When the co-content is 1.0%, the films with relatively high electron mobility are obtained. The electron mobility is about 45.5 cm2.V-1.s-1, the resistivity is about 3.66 × 10-4Ω.cm, the electron carrier concentration is about 3.74 × 1020cm-3, the sheet resistance is about 22.88Ω / □, 400 ~ 1 100 The average transmittance in the nm spectral region is about 76% (glass-containing substrate, ie glass / IMWO film).