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介绍了ｎ－ＩｎＰ／ｐ－ＩｎＧａＡｓＰ／０－ＩｎＰ结构的异质结光电三极管制作过程，并获得了对１．３μｍ的入射光，光增益达２２０，用带尾纤的ＧａＡｓ／ＧａＡｌＡｓ发光管测量，光学增益达１４７０。
The fabrication process of n-InP / p-InGaAsP / 0-InP heterostructure phototransistor was introduced and the incident light with the wavelength of 1.3μm was obtained. The optical gain reached 220 and was measured with pigtailed GaAs / GaAlAs phosphor , Optical gain up to 1470.