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运用深能级瞬态谱(DLTS)技术,结合等时退火,研究了1.8MeV电子辐照在n型LPE G_a_(1-x)Al_λAs(0≤x≤0.28)层中产生电子陷阱。结果表明,这些电子陷阱可按退火温度分为两类:一类退火温度在480～510k之间,包括E_1、E_2和E_3;另一类包括未见报道过的Q_1、Q_2、Q_3和Q_4,其退火温度高于600K.Q_2的出现与Al原子存在有关,是n型LPE Ga_(1-x)Al_λAs(x>0)中特有的缺陷。
Using deep level transient spectroscopy (DLTS) combined with isochronal annealing, electron traps have been studied at n - type LPE G_a_ (1-x) Al_λAs (0≤x≤0.28) layers by 1.8MeV electron irradiation. The results show that the electron traps can be divided into two types according to the annealing temperature: one is between 480 and 510k, including E_1, E_2 and E_3; the other includes Q_1, Q_2, Q_3 and Q_4, The annealing temperature is higher than 600 K. The occurrence of Q 2 is related to the presence of Al atoms and is a peculiar defect of n-type LPE Ga 1-x Al_As (x> 0).