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本文从讨论半导体表面势阱形成开始,着重阐述了 C C D 的基本结构和工作原理,对于 C C D 的主要参数及其在三大领域的应用方面,亦都——作了分析和介绍。
This paper begins with the discussion of the formation of semiconductor surface potential well, and emphatically expounds the basic structure and working principle of C D. The main parameters of C C D and its applications in the three fields are also analyzed and introduced.