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Sol-gel process was adopted to prepare BiFeO3 films.BiFeO3 films were deposited on LaNiO3 coated Si(100) substrates annealed at 500 and 550 ℃,respectively.The X-ray diffraction results reveal that BiFeO3 film has a rhombohedrally distorted perovskite structure with space group R3c.The film annealed at 500 ℃ has larger remnant polarization(Pr) of 35.3 μC/cm2.For the film annealed at 550 ℃,smaller remnant polarization of Pr=4.8 μC/cm2 is observed for its low breakdown electric field.Lower leakage conduction is observed in the film annealed at 500 ℃ at low applied field.
Sol-gel process was adopted to prepare BiFeO3 films. BiFeO3 films were deposited on LaNiO3 coated Si (100) substrates annealed at 500 and 550 ° C, respectively. The X-ray diffraction results reveal that BiFeO3 film has a rhombohedrally distorted perovskite structure with space group R3c. The film annealed at 500 ° C has a larger remnant polarization (Pr) of 35.3 μC / cm2.For the film annealed at 550 ° C, smaller remnant polarization of Pr = 4.8 μC / cm2 is observed for its low breakdown electric field. leakage conduction is observed in the film annealed at 500 ℃ at low applied field.