On-chip mode-locked laser diode structure using multimode interference reflectors

来源 :Photonics Research | 被引量 : 0次 | 上传用户:ff303
下载到本地 , 更方便阅读
声明 : 本文档内容版权归属内容提供方 , 如果您对本文有版权争议 , 可与客服联系进行内容授权或下架
论文部分内容阅读
We report, for the first time to our knowledge, an on-chip mode-locked laser diode(OCMLLD) that employs multimode interference reflectors to eliminate the need of facet mirrors to form the cavity. The result is an OCMLLD that does not require cleaved facets to operate, enabling us to locate this OCMLLD at any location within the photonic chip. This OCMLLD provides a simple source of optical pulses that can be inserted within a photonic integrated circuit chip for subsequent photonic signal processing operations within the chip(modulation, optical filtering, pulse rate multiplication, and so on). The device was designed using standardized building blocks of a generic active/passive In P technology platform, fabricated in a multi-project wafer run, and achieved mode-locking operation at its fundamental frequency, given the uncertainty at the design step of the optical length of these mirrors, critical to achieve colliding pulse mode-locked operation. We report, for the first time to our knowledge, an on-chip mode-locked laser diode (OCMLLD) that employs multimode interference reflectors to eliminate the need of facet mirrors to form the cavity. The result is an OCMLLD that does not require require cleaved facets to operate, enabling us to locate this OCMLLD at any location within the photonic chip. This OCMLLD provides a simple source of optical pulses that can be inserted within a photonic integrated circuit chip for subsequent photonic signal processing operations within the chip (modulation, optical filtering, pulse rate multiplication, and so on). The device was designed using standardized building blocks of a generic active / passive In P technology platform, fabricated in a multi-project wafer run, and achieved mode-locking operation at its fundamental frequency, given the uncertainty at the design step of the optical length of these mirrors, critical to achieve colliding pulse mode-locked operation.
其他文献
在新造基地乡土竹种栽培时,合理的栽植技术不仅有利于提高竹苗的成活率,还利于竹苗生根、长枝、长笋,达到人们所期望的经济效益和生态效益。 In the new base of local cult
介绍了华北电网的供用电状况 ,提出了华北电网加快建设抽水蓄能电站的必要性 ,分析了建设抽水蓄能电站所产生的经济效益 ,并对如何开展华北电网抽水蓄能电站的建设工作和解决
The fabrication and characterization of 1700 V 7A 4H-SiC vertical double-implanted metal-oxide-semiconductor field-effect transistors(VDMOSFETs) are reported.Th
试验优选提出的贴面挑流 +大差动鼻坎 +不连续低坎的消能工型式 ,其设计洪水和校核洪水下的冲刷深度、冲刷范围、冲刷体积均比原方案减少 70 %以上 ,可供同类工程参考应用。
2011年,中央政府首次公开“三公”经费,2012年4月,国务院再下“三公”经费公开令箭,要求省级政府两年内全面公开“三公”经费,紧随中央步调,地方政府陆续公布“三公”经费预
人常说,草木无情,当草木染上了疾病、遭受虫害,植物的痛楚却难以言说,与植物感同身受的还有紧张的植物保护技术人员。近年来,有害生物绿色防控技术的快速发展,正逢传统防治方
Ring oscillators based on indium gallium zinc oxide thin film transistors are fabricated on glass substrates.The oscillator circuit consists of seven delay stag
Direct-current transfer characteristics of(In GaN)/AlGaN/AlN/GaN hetcrojunction field effect transistors(HFETs)are presented.A drain current plateau(Ids = 32.0
The capacitance-voltage characteristics of AlGaN/GaN high-electron-mobility transistors(HEMTS)are measured in the temperature range of 223-398 K.The dependence
InAs_(1-x)Sb_x with different compositions is grown by molecular beam epitaxy on(lOO)-oriented semi-insulating GaAs substrates.The increase of Sb content in the