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本文系统研究了PECVD法沉积μc-Si薄膜中衬低温度、氢气稀释率和射频功率等参数对μc-Si薄膜结构特性的影响。表明:随着衬低温度的增加、氢气稀释率的增大、射频功率的提高,薄膜的晶化率增大。沉积薄膜的晶化率最大可达80%,表面粗糙度大约为30nm。通过对反应过程中的能量变化进行了分析,得到反应为放热反应,且非晶结构对沉积参数比较敏感。
In this paper, the influence of low temperature, hydrogen dilution rate and RF power on the structural characteristics of μc-Si thin films deposited by PECVD was studied systematically. It shows that with the increase of the liner temperature, the increase of hydrogen dilution rate and the increase of RF power, the crystallization rate of the film increases. The deposition rate of the deposited film up to 80%, the surface roughness of about 30nm. By analyzing the energy changes during the reaction, the reaction is exothermic, and the amorphous structure is more sensitive to the deposition parameters.