论文部分内容阅读
东芝推出全球首款注148层3D堆叠式结构闪存注2,该闪存容量达到256Gb(32GB),同时采用了行业领先的三阶存储单元(TLC)技术。这款全新闪存适用于各种产品应用,包括消费级固态硬盘(SSD)、智能手机、平板电脑和内存卡以及面向数据中心的企业级SSD。据悉,样品将于9月开始发货。东芝Bi CS FLASHTM采用目前世界最尖端的48层堆叠工艺,超越主流2D NAND闪存的容量,同时提高了可写入/擦除次数及可靠性,并提高了写入速度。
Toshiba Introduces World’s First 148-Layer 3D Stackable Flash Note2 to 256Gb (32GB) Flash with Industry-Leading Third-Order Memory Cell (TLC) Technology. The new flash is suitable for a wide range of product applications, including consumer-grade solid-state drives (SSDs), smartphones, tablets and memory cards, and enterprise-class SSDs for the data center. It is reported that the sample will be shipped in September. Toshiba Bi CS FLASHTM uses the world’s most sophisticated 48-layer stacking process, beyond the capacity of mainstream 2D NAND flash memory, while increasing the number of write / erase and reliability, and improve the write speed.