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用化学气相沉积法合成了高密度的In,A1共掺杂ZnO纳米串,用合成出的纳米串组装成了光电探测器.纳米串为六角纤锌矿结构,平均长度大约为5μm.研究了光电导的机制以及光电探测器的光电特性,包括在暗环境及紫外照射下的伏安特性、光电响应率和光电响应时间.结果表明,器件存在内部增益机制,光响应时间小于0.5 s,衰减时间约为23 s,可用于光电探测.
High-density In and A1 co-doped ZnO nanowires were synthesized by chemical vapor deposition, and the assembled nanowires were assembled into photodetectors. The nanowires were hexagonal wurtzite with an average length of about 5 μm. Photoconductivity and photodetector properties, including the voltammetric characteristics, the photoelectric response rate and the photoelectric response time in the dark environment and ultraviolet radiation.The results show that the device has internal gain mechanism, the optical response time is less than 0.5 s, attenuation The time is about 23 s, which can be used for photoelectric detection.