论文部分内容阅读
我们介绍了一种在绝缘衬底上制备硅厚膜的技术。我们的做法是,先在制备有SiO_2条形图形的硅片上用传统的方法沉积—层薄的多晶硅膜。然后用聚焦卤灯的光能使衬底的表面部分融化。融化的深度受硅融化时条形SiO_2下陷深度控制。随着扫描融化区域,硅就在前沿固化,于是就在衬底上得到一些被籽晶区隔开的20～/40μm厚的SiO_2上的条形无缺陷硅膜。
We describe a technique for making thick silicon films on insulating substrates. Our approach is to deposit a thin layer of polysilicon film by conventional methods on a silicon wafer prepared with a SiO 2 bar graph. The surface of the substrate is then partially melted with light that focuses on the halogen lamp. The depth of thawing is controlled by the sag depth of the stripe SiO_2 when melted by silicon. As the area of the melt is scanned, the silicon is solidified at the leading edge, resulting in some strip-shaped defect-free silicon films on the substrate with 20 to 40 μm thick SiO 2 separated by seed crystals.