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用电子束蒸发LaB_6单晶的方法,制备了LaB_6/GsAs肖特基势垒,经800℃高温退火后,势垒高度为0.70eV,理想因子为1.15～1.2。用俄歇能谱观察到LaB_6/GaAs界面有良好的热稳定性,以LaB_6为栅得到了初步的全离子注入的MESFET特性。结果表明,LaB_6有希望用于GaAs集成电路。
LaB_6 / GsAs Schottky barrier was prepared by electron beam evaporation of LaB_6 single crystal. After annealing at 800 ℃, the barrier height was 0.70eV and the ideal factor was 1.15 ~ 1.2. The good thermal stability of the LaB_6 / GaAs interface was observed by Auger spectrum, and the initial MESFET property of all-ion implantation was obtained by using LaB_6 as the gate. The results show that LaB_6 is promising for GaAs ICs.