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当今世界上生长半导体级硅单晶的方法有直拉切氏法(CZ)和悬浮区熔法(FZ)。其中切氏法生长的硅单晶占半导体工业需求量的80%以上。切氏法硅单晶生长过程中,熔硅与石英坩埚的反应产生 SiO 微粒。大直径硅单晶,由于拉制周期长、每根单晶拉制时间在十个小时以上,这个问题尤为突出,无沦在真空和氩气氛
In today’s world, semiconductor-grade silicon single crystal growth methods are Czochralski (CZ) and suspension zone melting (FZ). Among them, the silicon monocrystalline crystal grown by Chisholm accounted for more than 80% of the demand of the semiconductor industry. In the process of the growth of the single-crystal silicon by the Chrystal method, the reaction between the molten silicon and the quartz crucible generates SiO particles. Large-diameter silicon single crystal, due to the drawing cycle length, each single crystal drawing time in more than ten hours, the problem is particularly prominent, no reduction in vacuum and argon atmosphere