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本文简要地阐述了2048位线阵电荷耦合光电二极管摄象器件(CCPD)的工作原理及器件的结构、制作特点,同时对一些主要的参数进行了研究、讨论。采用浅结低浓度的光电二极管阵列作为电荷耦合摄象器件的光敏元,取代了原来CCD器件的MOS光敏元,使光子在到达硅衬底之前减少了多层介质的光吸收和反射,大大地捷高了器件的蓝光响应,利用双重吸杂技术,使暗电流下降,器件性能明显提高。
This article briefly describes the working principle of the 2048 bit CCD CCD photodiode device (CCPD) and its structure and fabrication features. At the same time, some major parameters are studied and discussed. The photodiode arrays with shallow junction and low concentration are used as the photosensitive elements of the CCD camera to replace the MOS photosensors of the original CCD device so that the photons reduce the light absorption and reflection of the multilayer medium before reaching the silicon substrate. Czech Republic, the high blue response of the device, the use of double absorption technology, so that the dark current decline, significantly improved device performance.