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利用直流对靶磁控溅射镀膜法,在Si衬底上制备出在太赫兹(THz)波段具有开关性能的氧化钒(VOx)薄膜。用X射线光电子能谱(XPS)、扫描电子显微镜(SEM)方法对VOx薄膜的组份和形貌进行表征。利用THz时域频谱系统(THz-TDS)对VOx薄膜的光致相变性能进行测试。实验表明,VOx薄膜在波长532 nm连续激光照射下具有明显的光致相变特性,且随着薄膜中V元素总体价态的升高,THz透射率达到峰值时的频率逐渐降低。
By DC magnetron sputtering, a vanadium oxide (VOx) thin film with switching performance in THz band was fabricated on Si substrate. The composition and morphology of the VOx films were characterized by X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). The photodegradability of VOx films was tested by THz time-domain spectroscopy (THz-TDS). The experimental results show that the VOx thin film has obvious photodifficable phase under continuous 532 nm wavelength laser irradiation, and the frequency of THz transmittance peak decreases with the increase of V valence.