提出一种ＩＣ芯片设计中双极型器件直流模型参数的提取方法．采取ＧＰ模型建立双向目标函数进行全局优化提取．分１级和２级参数两层处理．１级参数系提取ＩＣ设计中各管的共同参数，２级参数则为提取与各个管的结构和尺寸相关的特定参数，尽管提取对象只是样管，但可以由模型内在关系通过程序计算出各管的特定参数．从而保证了电路模拟所需输入参数的真实性 A method for extracting DC model parameters of bipolar devices in IC chip design is proposed. Take GP model to establish bidirectional objective function for global optimization extraction. Points 1 and 2 parameters of two-tier processing. The first level parameter is extracted from the common parameters of each tube in the IC design. The second level parameter is to extract the specific parameters related to the structure and size of each tube. Although the object to be extracted is only a sample tube, the intrinsic relationship of the model can be calculated through the program Tube specific parameters. Thus ensuring the circuit simulation of the input parameters required for the authenticity