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扫描电子显微镜(SEM)具有高分辨能力和多种功能,这使它在固体物理,特别是半导体物理与工艺的研究工作中占有重要地位。扫描电镜是形貌观察与微区组份分析的有效工具,这已为人们所熟知。然而扫描电镜在研究微区光电特性方面却有很大潜力。本工作的目的就是为了发掘这种潜力,进而得到关于半导体微区晶体结构、能带结构、结区光电特性与少子运动情况的信息。
Scanning electron microscopy (SEM) with high resolution and a variety of functions, which makes it in the solid state physics, especially in the study of semiconductor physics and technology occupies an important position. Scanning electron microscopy is an effective tool for morphological and micro-component analysis, which is well known. However, SEM has great potential in the study of the optical properties of microdomains. The purpose of this work is to explore this potential and to obtain information about the crystalline structure of the semiconductor microcrystal, the band structure, the optoelectronic properties of the junction area, and the motion of the less advanced child.